What is the reverse recovery time (trr) specification for HVD series?

HVC's HVD high voltage diode family offers multiple reverse recovery speed grades to match diverse application requirements:

HVD Variant

trr Specification

Test Condition

Best Application

|-------------|-------------------|----------------|------------------|

HVD-Standard	150ns – 300ns	If = 0.5 × IFAVM, diI/dt = 50A/μs	Line-frequency rectifiers, CW multipliers @ 50/60Hz
HVD-Fast Recovery (FR)	40ns – 80ns	If = IFAVM, diI/dt = 100A/μs	High-frequency inverters, RF plasma, SMPS secondary
HVD-UltraFast (UF)	15ns – 35ns	If = IFAVM, diI/dt = 200A/μs	SiC/GaN auxiliary supplies, very-HF resonant converters
HVD-Slow (Economy)	300ns – 500ns	If = 0.25 × IFAVM	Cost-sensitive bulk rectification, low-freq charging circuits

Note: Faster trr typically trades off against higher forward voltage drop (VF) and/or lower reverse voltage capability. For applications requiring both fast recovery AND high reverse voltage (>30kV), HVC recommends series-stacking HVD-FR devices with external grading networks — a configuration successfully deployed in medical CT scanner multipliers.

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Schema_JSON

{ "@context": "https://schema.org", "@type": "FAQPage", "mainEntity": [{ "@type": "Question", "name": "What is the reverse recovery time (trr) for HVD series?", "acceptedAnswer": { "@type": "Answer", "text": "Four speed grades: HVD-Standard 150-300ns(line-freq rectifiers/CW mult @50-60Hz), HVD-FR 40-80ns(HF inverters/RF plasma/SMPS), HVD-UltraFast 15-35ns(SiC/GaN aux/VHF resonant), HVD-Slow 300-500ns(cost-sensitive bulk/low-freq charge). Trade-off: faster trr = higher VF/lower VRRM. For fast+high-V(>30kV): series-stack HVD-FR with grading networks(deployed in CT scanners)." } }] }

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