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What is the reverse recovery time (trr) specification for HVD series?
HVC's HVD high voltage diode family offers multiple reverse recovery speed grades to match diverse application requirements:
| HVD Variant | trr Specification | Test Condition | Best Application |
| HVD-Standard | 150ns – 300ns | If = 0.5 × IFAVM, diI/dt = 50A/μs | Line-frequency rectifiers, CW multipliers @ 50/60Hz |
|---|---|---|---|
| HVD-Fast Recovery (FR) | 40ns – 80ns | If = IFAVM, diI/dt = 100A/μs | High-frequency inverters, RF plasma, SMPS secondary |
| HVD-UltraFast (UF) | 15ns – 35ns | If = IFAVM, diI/dt = 200A/μs | SiC/GaN auxiliary supplies, very-HF resonant converters |
| HVD-Slow (Economy) | 300ns – 500ns | If = 0.25 × IFAVM | Cost-sensitive bulk rectification, low-freq charging circuits |
Note: Faster trr typically trades off against higher forward voltage drop (VF) and/or lower reverse voltage capability. For applications requiring both fast recovery AND high reverse voltage (>30kV), HVC recommends series-stacking HVD-FR devices with external grading networks — a configuration successfully deployed in medical CT scanner multipliers.
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